IRFP23N50L Vishay, IRFP23N50L Datasheet - Page 5

• Manufacturer Part Number: IRFP23N50L
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP23N50L

Document Number: 91209
S-81352-Rev. A, 16-Jun-08
Fig. 13 - Threshold Voltage vs. Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig. 11a - Switching Time Test Circuit
- 75 - 50 - 25
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
0.001
0.01
10 V
10
0.1
V
1
0.00001
GS
D = 0.50
V
DS
0.10
0.20
0.02
0.05
0.01
T
J
, Temperature (°C)
0
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
25
D.U.T.
R
50
D
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
75
I
D
= 250 µA
100
+
-
t
V
1
, Rectangular Pulse Duration (sec)
DD
125
150
0.001
Fig. 14 - Maximum Avalanche Energy s. Drain Current
0.01
IRFP23N50L, SiHFP23N50L
750
600
450
300
150
0
25
90 %
10 %
Fig. 11b - Switching Time Waveforms
V
Starting T , Junction Temperature
V
DS
Notes:
1. Duty factor D =
2. PeakT
GS
50
t
d(on)
J = P DM x Z thJC + T C
t
r
75
0.1
P DM
t 1 / t 2
t 1
100
Vishay Siliconix
TOP
BOTTOM 23A
t 2
t
d(off)
125
t
f
1
www.vishay.com
(°C)
10A
15A
I
D
150
5