PMF290XN,115 NXP Semiconductors, PMF290XN,115 Datasheet - Page 4

• Manufacturer Part Number: PMF290XN,115
• Description: MOSFET N-CH 20V 1A SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF290XN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 34pF @ 20V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057729115; PMF290XN T/R; PMF290XN T/R

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12767
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
Z th(j-sp)
(K/W)
10 3
10 2
10
1
10 -4
thermal resistance from junction to solder point
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -3
Rev. 01 — 27 February 2004
10 -2
Conditions
Figure 4
N-channel TrenchMOS™ extremely low level FET
10 -1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
Min
-
P
PMF290XN
t p
t p (s)
T
Typ
-
03an27
=
t p
T
t
Max
220
10
Unit
K/W
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