PMF290XN,115 NXP Semiconductors, PMF290XN,115 Datasheet - Page 8

• Manufacturer Part Number: PMF290XN,115
• Description: MOSFET N-CH 20V 1A SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF290XN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 34pF @ 20V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057729115; PMF290XN T/R; PMF290XN T/R

Philips Semiconductors
9397 750 12767
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
0.8
0.6
0.4
0.2
= 25 C and 150 C; V
1
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
150 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03am99
Rev. 01 — 27 February 2004
1.2
Fig 13. Gate-source voltage as a function of gate
N-channel TrenchMOS™ extremely low level FET
I
V GS
D
(V)
= 1 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 10 V
DD
= 10 V
0.2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.4
PMF290XN
0.6
Q G (nC)
03an01
0.8
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