PMF290XN,115 NXP Semiconductors, PMF290XN,115 Datasheet - Page 9

• Manufacturer Part Number: PMF290XN,115
• Description: MOSFET N-CH 20V 1A SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF290XN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 34pF @ 20V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057729115; PMF290XN T/R; PMF290XN T/R

Philips Semiconductors
7. Package outline
Fig 14. SOT323 (SC-70).
9397 750 12767
Product data
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
Rev. 01 — 27 February 2004
1.3
e
w
B
M
0.65
B
e 1
SC-70
scale
EIAJ
1
2.2
2.0
H E
N-channel TrenchMOS™ extremely low level FET
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
w
EUROPEAN
L p
A
PMF290XN
Q
c
X
v
ISSUE DATE
M
97-02-28
A
SOT323
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