PMK50XP,518 NXP Semiconductors, PMK50XP,518 Datasheet
PMK50XP,518
Specifications of PMK50XP,518
Related parts for PMK50XP,518
PMK50XP,518 Summary of contents
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PMK50XP P-channel TrenchMOS extremely low level FET Rev. 02 — 28 April 2010 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate 5 D drain 6 D drain 7 D drain 8 D drain 3. Ordering information Table 3. Ordering information Type number Package Name PMK50XP SO8 PMK50XP Product data sheet ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors − (A) −10 2 −10 −1 −10 -1 − ° single pulse sp DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance th(j-sp) from junction to solder point th(j-sp) (K/W) δ ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD V gate-source plateau ...
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... NXP Semiconductors −20 −4.5 −3.5 − (A) −15 −10 −5 0 −0.5 − °C j Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values -1.2 V GS(th) max (V) -0.8 typ min -0 Fig 7. Gate-source threshold voltage as a function of junction temperature PMK50XP Product data sheet ...
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... NXP Semiconductors 2 a 1.5 1 0 Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature - -4 ° Fig 11. Gate-source voltage as a function of gate charge; typical values PMK50XP Product data sheet P-channel TrenchMOS extremely low level FET 03aq10 120 R DSon (mΩ) 120 180 ( ° ...
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... NXP Semiconductors (pF MHz GS Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMK50XP Product data sheet P-channel TrenchMOS extremely low level FET 03aq08 -I (A) C iss C oss C rss (V) DS Fig 14. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PMK50XP_2 20100428 • Modifications: Various changes to content. PMK50XP_1 20070917 PMK50XP Product data sheet P-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...