PMK50XP,518 NXP Semiconductors, PMK50XP,518 Datasheet - Page 7

• Manufacturer Part Number: PMK50XP,518
• Description: MOSFET P-CH FET 20V 7.9A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMK50XP,518

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.9A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 20V
• Power - Max: 5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061118518

NXP Semiconductors
PMK50XP
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
V
(V)
a
1.5
0.5
GS
-5
-4
-3
-2
-1
2
1
0
0
-60
factor as a function of junction temperature
charge; typical values
Normalized drain-source on-state resistance
0
I
T
V
D
j
DS
= -4.7 A
= 25 °C
= -10 V
0
4
60
8
120
Q
G
All information provided in this document is subject to legal disclaimers.
03aq10
T
(nC)
j
03aq09
( ° C)
180
12
Rev. 02 — 28 April 2010
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate charge waveform definitions
R
(mΩ)
DSon
P-channel TrenchMOS extremely low level FET
120
90
60
30
0
of drain current; typical values
T
0
V
j
V
V
V
GS(pl)
= 25 °C
DS
GS(th)
GS
V
GS
Q
(V) =
GS1
-10
I
Q
D
-1.9
GS
Q
GS2
-2.1
Q
G(tot)
Q
-2.3
-20
GD
PMK50XP
-2.5
© NXP B.V. 2010. All rights reserved.
I
D
003aaa508
003aab646
(A)
-4.5
-3.5
-3
-30
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