PMK50XP,518 NXP Semiconductors, PMK50XP,518 Datasheet - Page 4

• Manufacturer Part Number: PMK50XP,518
• Description: MOSFET P-CH FET 20V 7.9A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMK50XP,518

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.9A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 20V
• Power - Max: 5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061118518

NXP Semiconductors
5. Thermal characteristics
Table 5.
PMK50XP
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-sp)
Z
(K/W)
(A)
th(j-sp)
I
−10
10
10
−10
−10
−10
D
10
−1
10
-1
-2
2
1
3
2
-1
−10
10
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to solder point as a function of pulse duration
-5
sp
Thermal characteristics
-1
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
= 25 °C; I
Parameter
thermal resistance
from junction to solder
point
DM
10
is single pulse
-4
Limit R
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
−1
DSon
-3
Figure 4
= −V
Rev. 02 — 28 April 2010
DS
/ −I
D
DC
10
-2
P-channel TrenchMOS extremely low level FET
−10
10
-1
100 μ s
t
1 ms
10 ms
100 ms
Min
-
p
=
10 μs
V
P
1
DS
(V)
t
p
Typ
-
PMK50XP
t
T
p
(s)
© NXP B.V. 2010. All rights reserved.
003aab643
003aab644
δ =
Max
25
T
t
p
t
−10
10
2
Unit
K/W
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