PMK50XP,518 NXP Semiconductors, PMK50XP,518 Datasheet - Page 6

• Manufacturer Part Number: PMK50XP,518
• Description: MOSFET P-CH FET 20V 7.9A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMK50XP,518

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.9A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 20V
• Power - Max: 5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061118518

NXP Semiconductors
PMK50XP
Product data sheet
Fig 5.
Fig 7.
V
GS(th)
(V)
(A)
I
D
-1.2
-0.8
-0.4
−20
−15
−10
−5
0
0
function of drain-source voltage; typical values
-60
junction temperature
T
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
j
= 25 °C
−0.5
0
−4.5
max
typ
min
−3.5 −3
60
−1
V
GS
−2.5
−1.5
120
(V) = −1.5V
All information provided in this document is subject to legal disclaimers.
003aab645
T
V
j
−2.3
−2.1
−1.9
−1.7
03ar95
DS
(°C)
(V)
180
−2
Rev. 02 — 28 April 2010
Fig 6.
Fig 8.
(A)
I
(A)
P-channel TrenchMOS extremely low level FET
10
10
10
10
D
I
D
−20
−15
−10
-3
-4
-5
-6
−5
0
function of gate-source voltage; typical values
0.2
gate-source voltage
V
Transfer characteristics: drain current as a
T
Sub-threshold drain current as a function of
0
j
DS
= 25 °C; V
> I
T
D
j
0.4
= 150 °C
x R
DSon
DS
−1
min
0.6
= -5 V
typ
25 °C
0.8
−2
PMK50XP
max
© NXP B.V. 2010. All rights reserved.
1
V
003aab647
003aab389
V
GS
GS
(V)
(V)
1.2
−3
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