PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet - Page 7

• Manufacturer Part Number: PSMN006-20K,518
• Description: MOSFET N-CH 20V 32A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN006-20K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 32nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 32 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057032518; PSMN006-20K /T3; PSMN006-20K /T3

Philips Semiconductors
9397 750 09631
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
0.8
0.6
0.4
0.2
GS
= 1 mA; V
1
0
junction temperature.
= 0 V; f = 1 MHz
-80
DS
= V
GS
0
typ
min
80
(pF)
C
10 4
10 3
10 2
10 -1
T j ( C)
03ai71
160
Rev. 01 — 30 May 2002
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
I D
T
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
C iss
C oss
C rss
0
03ai68
DS
0.2
10 2
= 5 V
TrenchMOS™ ultra low level FET
0.4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
min
PSMN006-20K
0.6
typ
0.8
V GS (V)
03ai70
1
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