PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet - Page 2

• Manufacturer Part Number: PSMN006-20K,518
• Description: MOSFET N-CH 20V 32A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN006-20K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 32nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 32 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057032518; PSMN006-20K /T3; PSMN006-20K /T3

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09631
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
I
V
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
DS
tot
j
DS
GS
tot
stg
j
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain current (DC)
gate-source voltage
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Limiting values
Quick reference data
Conditions
25 C
T
T
V
V
V
Conditions
25 C
T
T
T
sp
sp
sp
sp
sp
sp
sp
GS
GS
GS
Rev. 01 — 30 May 2002
= 25 C; V
= 25 C
= 25 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
T
T
j
j
150 C
150 C
Figure 1
D
D
D
GS
GS
= 5 A; T
= 5 A; T
= 5 A; T
= 4.5 V
= 4.5 V;
p
p
j
j
j
= 25 C
= 25 C
= 25 C
10 s;
10 s
Figure 2
Figure 3
and
TrenchMOS™ ultra low level FET
3
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN006-20K
Typ
-
-
-
-
4.2
4.8
5.7
Min
-
-
-
-
-
-
-
-
55
Max
20
32
8.3
150
5
5.7
8.2
Max
20
32
60
8.3
150
+150
7.5
30
10
2 of 12
Unit
V
A
W
m
m
m
Unit
V
A
V
A
W
A
A
C
C
C