PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet - Page 5

• Manufacturer Part Number: PSMN006-20K,518
• Description: MOSFET N-CH 20V 32A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN006-20K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 32nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 32 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057032518; PSMN006-20K /T3; PSMN006-20K /T3

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09631
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovery charge
Characteristics
Conditions
I
I
V
V
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
GS
GS
GS
GS
DS
GS
DD
T
T
T
T
= 3 A; V
= 10 A; dI
= 250 A; V
= 1 mA; V
= 30 A; V
Rev. 01 — 30 May 2002
j
j
j
j
= 20 V; V
= 8 V; V
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 15 V; I
= 0 V; V
= 10 V; R
= 25 C
= 150 C
= 25 C
= 150 C
GS
DD
S
DS
DS
D
/dt = 70 A/ s; V
= 0 V;
D
D
D
GS
DS
L
GS
= 10 A
= 10 V; V
= V
= 5 A;
= 5 A;
= 5 A;
= 20 V; f = 1 MHz;
= 10 ; V
= 0 V
= 0 V
= 0 V
GS
Figure 12
;
Figure 7
Figure 7
Figure 8
Figure 9
GS
GS
= 2.5 V;
= 4.5 V; R
GS
and
and
= 0 V
Figure 11
8
8
Figure 13
TrenchMOS™ ultra low level FET
G
= 6
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN006-20K
Min
20
0.4
0.15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
0.7
-
0.05
-
10
4.2
4.8
5.7
25
32
10
13.2
4350 -
825
550
65
32
190
90
0.75
47
17
Max
-
-
-
1
0.5
100
5
5.7
8.2
-
-
-
-
-
-
-
-
-
-
1.3
-
-
5 of 12
Unit
V
V
V
mA
nA
m
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A