BUK9240-100A,118 NXP Semiconductors, BUK9240-100A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9240-100A,118
• Description: MOSFET N-CH 100V 33A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9240-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0386 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 33 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056252118; BUK9240-100A /T3; BUK9240-100A /T3

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07573
Product specification
Symbol
R
R
th(j-a)
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to mounting base as a function of
Z th(j-mb)
pulse duration.
(K/W)
0.001
0.01
0.1
10
1
10 -6
Rev. 01 — 03 October 2000
10 -5
Conditions
Figure 4
10 -4
10 -3
BUK9240-100A
TrenchMOS™ logic level FET
10 -2
© Philips Electronics N.V. 2000. All rights reserved.
P
10 -1
Value
71.4
1.3
t p
T
t p (s)
=
03na70
t p
T
t
Unit
K/W
K/W
1
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