BUK9240-100A,118 NXP Semiconductors, BUK9240-100A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9240-100A,118
• Description: MOSFET N-CH 100V 33A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9240-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0386 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 33 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056252118; BUK9240-100A /T3; BUK9240-100A /T3

Table 5:
T
Philips Semiconductors
9397 750 07573
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D (A)
Characteristics
120
100
(mOhm)
R DSon
80
60
40
20
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
50
45
40
35
30
25
20
0
V GS = 10 (V)
10
2
20
…continued
5.0
30
4
5.0
4.0
40
4.0
6
3.8
50
V GS = 3.0 (V)
3.6
8
V DS (V)
60
Conditions
I
Figure 15
I
V
3.2
S
S
03na66
3.4
GS
03na67
I D (A)
= 25 A;V
= 20 A; dI
10
= 10 V; V
70
3.6
3.4
3.2
3.0
2.8
2.6
2.4
Rev. 01 — 03 October 2000
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. On-state resistance: typical values.
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
factor as a function of junction temperature.
(mOhm)
R DSon
a
--------------------------- -
R
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
38
36
34
32
30
28
26
R
3
2
1
0
-60
DSon
3
D
Min
= 25 A
-20
4
5
20
BUK9240-100A
TrenchMOS™ logic level FET
Typ
0.85
60
240
6
60
© Philips Electronics N.V. 2000. All rights reserved.
7
100
8
Max
1.2
140
T j (
o
03aa29
9
V GS (V)
C)
03na64
180
10
Unit
V
ns
nC
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