BUK9240-100A,118 NXP Semiconductors, BUK9240-100A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9240-100A,118
• Description: MOSFET N-CH 100V 33A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9240-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0386 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 33 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056252118; BUK9240-100A /T3; BUK9240-100A /T3

Philips Semiconductors
9397 750 07573
Product specification
Fig 13. Transfer characteristics; typical values.
V
DS
= 25 V
I D
(A)
80
70
60
50
40
30
20
10
0
0
1
2
T j = 25 o C
Fig 15. Reverse diode current; typical values.
3
V
GS
= 0 V
T j = 175 o C
120
100
IS
(A)
4
80
60
40
20
0
V GS (V)
0.0
03na61
0.2
5
Rev. 01 — 03 October 2000
0.4
0.6
0.8
T j = 175 o C
1.0
Fig 14. Turn-on gate charge characteristics; typical
1.2
T
j
= 25 C; I
T j = 25 o C
1.4
values.
V SD (V)
V GS
(V)
1.6
03na62
6
5
4
3
2
1
0
0
1.8
D
= 25 A
20
BUK9240-100A
V DS = 14(V)
TrenchMOS™ logic level FET
© Philips Electronics N.V. 2000. All rights reserved.
40
V DS = 80(V)
Q G (nC)
03na63
60
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