BUK9610-55A,118 NXP Semiconductors, BUK9610-55A,118 Datasheet

MOSFET N-CH 55V 75A SOT404

BUK9610-55A,118

Manufacturer Part Number
BUK9610-55A,118
Description
MOSFET N-CH 55V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9610-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
68nC @ 5V
Input Capacitance (ciss) @ Vds
4307pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
75 A
Power Dissipation
200000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
139 ns
Rise Time
155 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056852118
BUK9610-55A /T3
BUK9610-55A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK9610-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 16 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
V
T
see
j
mb
j
j
j
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C
= 25 °C; see
Figure
Figure 11
= 25 °C; see
= 5 V; T
= 4.5 V; I
= 10 V; I
= 5 V; I
1; see
D
j
j
D
≤ 175 °C
= 25 °C;
= 25 A;
D
= 25 A;
= 25 A;
Figure
Figure 2
Figure 3
12;
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
7
8
Max Unit
55
75
200
11
9
10
V
A
W
mΩ
mΩ
mΩ

Related parts for BUK9610-55A,118

BUK9610-55A,118 Summary of contents

Page 1

... BUK9610-55A N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... sup °C; unclamped GS j(init) 03nf89 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1; - [2] - [1] Figure 1 - ≤ 10 µ -55 -55 [ ° Ω; ...

Page 4

... DSon δ Conditions see Figure 4 mounted on printed-circuit board; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET 03nf86 = 10 μ 100 μ 100 (V) DS Min Typ - - - 50 03nf87 t p δ = ...

Page 5

... °C j from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET Min Typ Max 1 ...

Page 6

... ° 03nd75 2 (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET Min - = DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03nd76 3 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0.5 0 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nd70 = 25 ° ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9610-55A separated from data sheet BUK9510_9610_55A v.1. BUK9510_9610_55A v.1 20010820 BUK9610-55A Product data sheet Data sheet status ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9610-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 February 2011 Document identifier: BUK9610-55A ...

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