BUK9610-55A,118 NXP Semiconductors, BUK9610-55A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9610-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9610-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 139 ns
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056852118; BUK9610-55A /T3; BUK9610-55A /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK9610-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
V
see
I
T
V
T
V
R
from drain lead 6 mm from package to
centre of die; T
from upper edge of drain mounting base
to centre of die; T
from source lead to source bond pad;
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
G(ext)
= 25 °C; see
= 25 °C; see
= 25 °C
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Figure 10
Figure 10
Figure 10
Figure
Figure
= 55 V; V
= 55 V; V
= 30 V; R
= 10 V; V
= -10 V; V
= 4.5 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
= 10 Ω; T
Rev. 02 — 16 February 2011
11; see
12; see
D
D
DS
DS
DS
DS
DS
D
D
= 25 A; T
= 25 A; T
GS
GS
DS
L
DS
= 25 A; T
= 44 V; V
j
= V
= V
= V
= 25 A; T
Figure 13
Figure 14
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
= 25 °C
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
j
= 0 V; T
= 0 V; T
= 25 °C
GS
GS
GS
Figure 12
Figure 11
; T
; T
; T
j
j
= 175 °C;
= 25 °C;
j
j
j
j
GS
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C
j
= 25 °C
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
= 5 V;
= 25 °C
= -55 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9610-55A
Min
55
50
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
2
-
-
7
8
68
8
28
3200
740
490
30
155
192
139
4.5
2.5
7.5
© NXP B.V. 2011. All rights reserved.
888
-
Max
-
-
2
-
2.3
10
500
100
100
11
20
9
10
-
-
-
4307
680
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
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