BUK9610-55A,118 NXP Semiconductors, BUK9610-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9610-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9610-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 139 ns
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056852118; BUK9610-55A /T3; BUK9610-55A /T3

NXP Semiconductors
Table 6.
BUK9610-55A
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
D
(A)
10
I
10
10
10
10
10
D
350
300
250
200
150
100
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Characteristics
V
GS
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
(V) = 10
1
min
4
…continued
typ
8
6
2
max
6
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
GS
DS
03aa36
V
= 25 A; V
= 20 A; dI
DS
(V)
Figure 15
03nd75
= 30 V; T
5
(V)
2.2
4
Rev. 02 — 16 February 2011
3
10
3
GS
S
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
g
(S)
fs
12
10
80
60
40
20
8
6
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
GS
3
0
= 0 V;
N-channel TrenchMOS logic level FET
20
7
BUK9610-55A
Min
-
-
-
40
11
Typ
0.85
77
230
60
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
(A)
Max
1.2
-
-
03nd72
03nf88
15
80
Unit
V
ns
nC
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