BUK9610-55A,118 NXP Semiconductors, BUK9610-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9610-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9610-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 139 ns
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056852118; BUK9610-55A /T3; BUK9610-55A /T3

Philips Semiconductors
9397 750 08555
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
P der
(%)
function of mounting base temperature.
120
100
= 25 C; I
80
60
40
20
0
=
0
I D
---------------------- -
P
(A)
10 3
10 2
10
tot 25 C
1
P
1
tot
Capped at 75 A due to package
DM
P
50
single pulse.
t p
100%
T
100
=
t p
T
t
R DSon = V DS / I D
150
T mb (ºC)
03aa16
200
Rev. 01 — 20 August 2001
BUK9510-55A; BUK9610-55A
DC
10
Fig 2. Continuous drain current as a function of
V
I
der
GS
I D
(A)
mounting base temperature.
120
100
=
80
60
40
20
4.5 V
0
25
-------------------
I
D 25 C
I
D
50
V DS (V)
75
100%
Capped at 75 A due to package
TrenchMOS™ logic level FET
100
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
125
t p = 10 µs
1 ms
10 ms
100 ms
100 µs
150
03nf86
175
T mb (ºC)
10 2
200
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