BUK9610-55A,118 NXP Semiconductors, BUK9610-55A,118 Datasheet - Page 7

• Manufacturer Part Number: BUK9610-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9610-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 139 ns
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056852118; BUK9610-55A /T3; BUK9610-55A /T3

Philips Semiconductors
9397 750 08555
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
V GS(th)
j
= 1 mA; V
= 25 C; V
g fs
(V)
(S)
junction temperature.
drain current; typical values.
2.5
1.5
0.5
80
60
40
20
0
2
1
0
-60
0
DS
DS
= V
= 25 V
20
0
GS
max
typ
min
60
40
120
60
T j (
I D (A)
o
03aa33
C)
180
80
Rev. 01 — 20 August 2001
BUK9510-55A; BUK9610-55A
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
C
j
(pF)
GS
= 25 C; V
8000
7000
6000
5000
4000
3000
2000
1000
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
gate-source voltage.
as a function of drain-source voltage; typical
values.
I D
= 0 V; f = 1 MHz
0
10 -2
0
DS
0.5
= V
10 -1
GS
1
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
1.5
C rss
1
C iss
C oss
typ
2
max
10
V DS (V)
2.5
V GS (V)
03nd77
03aa36
10 2
3
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