BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 10
![MOSFET N-CH TRENCH 40V I2PAK](/photos/5/32/53210/i__pak-3__to-220ab__sot226_pkg_sml.jpg)
BUK7E04-40A,127
Manufacturer Part Number
BUK7E04-40A,127
Description
MOSFET N-CH TRENCH 40V I2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7E04-40A127.pdf
(14 pages)
Specifications of BUK7E04-40A,127
Package / Case
I²Pak, TO-220AB (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
5730pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Gate Charge Qg
117 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056701127
NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT226 (I2PAK)
BUK7E04-40A
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT226
4.5
4.1
A
1.40
1.27
A
1
0.85
0.60
b
IEC
D
L
b
1.3
1.0
1
D
1
b
1
0.7
0.4
c
All information provided in this document is subject to legal disclaimers.
TO-262
JEDEC
1
max
e
11
D
E
REFERENCES
2
e
Rev. 03 — 15 June 2010
1.6
1.2
D
1
3
0
b
10.3
9.7
E
L
JEITA
scale
1
5
2.54
e
10 mm
15.0
13.5
L
mounting
N-channel TrenchMOS standard level FET
base
3.30
2.79
A
L
1
1
Q
2.6
2.2
Q
A
PROJECTION
EUROPEAN
c
BUK7E04-40A
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
06-02-14
09-08-25
SOT226
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