BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK7E04-40A,127
• Description: MOSFET N-CH TRENCH 40V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E04-40A,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 5730pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 117 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056701127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7E04-40A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7E04-40A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
I2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 15 June 2010
Simplified outline
SOT226 (I2PAK)
…continued
1
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
mb
GS
2
= 75 A; V
Figure 13
= 32 V; T
= 50 Ω; V
= 10 V; I
3
= 25 °C; unclamped
N-channel TrenchMOS standard level FET
sup
D
j
GS
= 25 °C;
= 25 A;
≤ 40 V;
= 10 V;
Graphic symbol
BUK7E04-40A
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
50
SOT226
Version
Max Unit
1.6
-
2 of 14
J
nC