BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 5

• Manufacturer Part Number: BUK7E04-40A,127
• Description: MOSFET N-CH TRENCH 40V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E04-40A,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 5730pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 117 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056701127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7E04-40A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
Conditions
see
vertical in still air
Rev. 03 — 15 June 2010
−4
Figure 4
10
−3
10
N-channel TrenchMOS standard level FET
−2
P
t
10
p
−1
T
BUK7E04-40A
t
Min
-
-
p
δ =
(s)
03ne69
t
T
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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