BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 5
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BUK7E04-40A,127
Manufacturer Part Number
BUK7E04-40A,127
Description
MOSFET N-CH TRENCH 40V I2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7E04-40A127.pdf
(14 pages)
Specifications of BUK7E04-40A,127
Package / Case
I²Pak, TO-220AB (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
5730pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Gate Charge Qg
117 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056701127
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7E04-40A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
Conditions
see
vertical in still air
Rev. 03 — 15 June 2010
−4
Figure 4
10
−3
10
N-channel TrenchMOS standard level FET
−2
P
t
10
p
−1
T
BUK7E04-40A
t
Min
-
-
p
δ =
(s)
03ne69
t
T
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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