BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 9

• Manufacturer Part Number: BUK7E04-40A,127
• Description: MOSFET N-CH TRENCH 40V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E04-40A,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 5730pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 117 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056701127

NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
V
30
DD
= 14 V
60
(A)
I
S
200
150
100
V
50
DD
90
0
0
All information provided in this document is subject to legal disclaimers.
= 32 V
Q
G
T
j
(nC)
03ne61
= 175 °C
120
Rev. 03 — 15 June 2010
0.5
Fig 14. Input, output and reverse transfer capacitances
(nF)
1.0
C
T
8
6
4
2
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
V
−1
SD
N-channel TrenchMOS standard level FET
(V)
03ne60
1.5
1
BUK7E04-40A
10
V
© NXP B.V. 2010. All rights reserved.
DS
C
C
C
(V)
iss
oss
rss
03ne67
10
2
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