BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 9
![MOSFET N-CH TRENCH 40V I2PAK](/photos/5/32/53210/i__pak-3__to-220ab__sot226_pkg_sml.jpg)
BUK7E04-40A,127
Manufacturer Part Number
BUK7E04-40A,127
Description
MOSFET N-CH TRENCH 40V I2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7E04-40A127.pdf
(14 pages)
Specifications of BUK7E04-40A,127
Package / Case
I²Pak, TO-220AB (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
5730pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Gate Charge Qg
117 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056701127
NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
V
30
DD
= 14 V
60
(A)
I
S
200
150
100
V
50
DD
90
0
0
All information provided in this document is subject to legal disclaimers.
= 32 V
Q
G
T
j
(nC)
03ne61
= 175 °C
120
Rev. 03 — 15 June 2010
0.5
Fig 14. Input, output and reverse transfer capacitances
(nF)
1.0
C
T
8
6
4
2
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
V
−1
SD
N-channel TrenchMOS standard level FET
(V)
03ne60
1.5
1
BUK7E04-40A
10
V
© NXP B.V. 2010. All rights reserved.
DS
C
C
C
(V)
iss
oss
rss
03ne67
10
2
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