PSMN009-100P,127 NXP Semiconductors
PSMN009-100P,127
Manufacturer Part Number
PSMN009-100P,127
Description
MOSFET N-CH 100V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Specifications of PSMN009-100P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
230W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
156nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.8 mOhm @ 25A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0088 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057044127::PSMN009-100P::PSMN009-100P
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