PSMN009-100B NXP Semiconductors, PSMN009-100B Datasheet
PSMN009-100B
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PSMN009-100B Summary of contents
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... PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 6 July 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Ordering information Type number Package Name Description PSMN009-100B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) PSMN009-100B_2 Product data sheet PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Simplified outline mb [ SOT404 (D2PAK) Rev. 02 — 6 July 2009 Graphic symbol ...
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... sup GS unclamped 03ah99 120 P der (%) 120 150 180 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 6 July 2009 PSMN009-100B Min Max - 100 - 100 - see Figure Figure 3 - 400 - 230 -55 175 -55 175 ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN009-100B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 6 July 2009 PSMN009-100B 03ai01 µs p 100 µ 100 (V) DS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN009-100B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board −5 −4 −3 − Rev. 02 — 6 July 2009 PSMN009-100B Min Typ Max - - 0. 03af48 t p δ ...
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... Figure 1.25 Ω Ω ° G(ext ° see Figure 13 Rev. 02 — 6 July 2009 PSMN009-100B Min Typ Max Unit 100 - - 4 500 µ ...
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... V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 6 July 2009 PSMN009-100B 03am56 V > DSon 175 ° ° (V) GS 03aa32 max typ min 0 ...
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... C (pF −1 150 200 10 Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 6 July 2009 PSMN009-100B 03aa29 0 60 120 180 ( ° 03ai07 C iss C oss C rss (V) DS © ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PSMN009-100B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 175 ° ° 0.5 1.0 Rev. 02 — 6 July 2009 PSMN009-100B 03ai06 1.5 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 6 July 2009 PSMN009-100B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN009-100B separated from data sheet PSMN009_100P_100B-01. PSMN009_100P_100B-01 20020429 PSMN009-100B_2 Product data sheet ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 6 July 2009 PSMN009-100B © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 6 July 2009 Document identifier: PSMN009-100B_2 ...