psmn009-100w NXP Semiconductors, psmn009-100w Datasheet

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psmn009-100w

Manufacturer Part Number
psmn009-100w
Description
Trenchmos Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN009-100W
Manufacturer:
KEC
Quantity:
30 000
Part Number:
PSMN009-100W
Manufacturer:
ST
0
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
GENERAL DESCRIPTION
SiliconMAX products use the latest
Philips
achieve
on-state
package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN009-100W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 Maximum continuous current limited by package.
October 1999
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
D
, T
stg
Trench
the
resistance
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
lowest
technology
in
possible
each
to
transistor
PINNING
SYMBOL
PIN
tab
1
2
3
CONDITIONS
T
T
T
T
T
T
j
j
mb
mb
mb
mb
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
gate
drain
source
drain
g
DESCRIPTION
1
d
s
GS
= 20 k
QUICK REFERENCE DATA
SOT429 (TO247)
R
MIN.
- 55
V
DS(ON)
-
-
-
-
-
-
-
I
DSS
PSMN009-100W
D
Product specification
1
= 100 A
= 100 V
2
MAX.
100
100
100
300
300
175
9 m
3
79
20
1
Rev 1.100
UNIT
W
˚C
V
V
V
A
A
A

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psmn009-100w Summary of contents

Page 1

... Applications:- • d.c. to d.c. converters • switched mode power supplies The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER V Drain-source voltage DSS ...

Page 2

... 5 Resistive load Measured from tab to centre of die Measured from drain lead to centre of die Measured from source lead to source bond pad MHz Product specification PSMN009-100W MIN. MAX. = 100 A; - 650 refer to - 100 TYP. MAX MIN ...

Page 3

... Reverse recovery time rr Q Reverse recovery charge rr October 1999 transistor CONDITIONS -dI /dt = 100 Product specification PSMN009-100W MIN. TYP. MAX. UNIT - - 100 300 A - 0. 100 - Rev 1.100 ...

Page 4

... Fig.6. Typical on-state resistance Product specification PSMN009-100W Transient thermal impedance, Zth j-mb (K/ 0.5 0.2 0.1 0. single pulse 1E-05 1E-04 1E-03 1E-02 Pulse width, tp (s) Fig.4. Transient thermal impedance f(t); parameter j-mb Drain Current, ID (A) VGS = 10 V ...

Page 5

... Fig.12. Typical capacitances f f Product specification PSMN009-100W Threshold Voltage, VGS(TO) (V) maximum typical minimum 100 120 140 160 180 Junction Temperature, Tj (C) Fig.10. Gate threshold voltage. = f(T ); conditions mA; V ...

Page 6

... October 1999 transistor 1000 100 VDD = 0.001 Fig.15. Maximum permissible non-repetitive avalanche current ( 1.1 1.2 1.3 1.4 1 Product specification PSMN009-100W Maximum Avalanche Current prior to avalanche = 150 C 0.01 0.1 1 Avalanche time, t (ms versus avalanche time (t AS unclamped inductive load 10 ) ...

Page 7

... scale ( 3.7 2.2 3.2 0 4.0 5.45 1.8 2.8 0 3.6 3.3 REFERENCES IEC JEDEC EIAJ TO-247 7 Product specification PSMN009-100W SOT429 2.6 7.5 15 3.5 5.3 0.4 13 2.4 3.3 7.1 15.3 4 EUROPEAN ISSUE DATE PROJECTION 98-04-07 99-08-04 Rev 1.100 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1999 transistor 8 Product specification PSMN009-100W Rev 1.100 ...

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