BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55ATE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057271118; BUK7107-55ATE /T3; BUK7107-55ATE /T3

NXP Semiconductors
Table 6.
BUK7107-55ATE_2
Product data sheet
Symbol
L
L
Source-drain diode
V
t
Q
rr
D
S
SD
r
Characteristics
Parameter
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
from upper edge of drain mounting base to
center of die
from source lead to source bond pad
I
see
I
V
S
S
DS
= 25 A; V
= 20 A; dI
Figure 17
= 30 V
Rev. 02 — 19 February 2009
GS
S
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C;
GS
= -10 V;
N-channel TrenchPLUS standard level FET
BUK7107-55ATE
Min
-
-
-
-
-
Typ
2.5
7.5
0.85
80
200
© NXP B.V. 2009. All rights reserved.
Max
-
-
1.2
-
-
Unit
nH
nH
V
ns
nC
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