BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55ATE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057271118; BUK7107-55ATE /T3; BUK7107-55ATE /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7107-55ATE_2
Product data sheet
Pin
1
2
3
4
5
mb
Type number
BUK7107-55ATE
Symbol
G
A
D
K
S
D
Pinning information
Ordering information
Package
Name
D2PAK
Description
gate
anode
drain
cathode
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 5 leads (one
lead cropped)
Rev. 02 — 19 February 2009
Simplified outline
(D2PAK)
SOT426
1
N-channel TrenchPLUS standard level FET
2
mb
3
4 5
BUK7107-55ATE
Graphic symbol
G
© NXP B.V. 2009. All rights reserved.
D
S
Version
SOT426
mbl317
A
K
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