BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55ATE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057271118; BUK7107-55ATE /T3; BUK7107-55ATE /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK7107-55ATE_2
Product data sheet
Symbol
Static characteristics
V
V
I
V
I
R
V
S
V
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
(BR)GSS
F(TSD)
F(TSD)
F(TSD)hys
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate-source breakdown
voltage
gate leakage current
drain-source on-state
resistance
temperature sense
diode forward voltage
temperature sense
diode temperature
coefficient
temperature sense
diode forward voltage
hysteresis
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
I
I
see
I
see
I
see
V
V
I
I
V
V
V
V
V
see
V
see
I
I
125 µA < I
I
see
V
T
V
R
D
D
D
D
D
G
G
F
F
D
j
DS
DS
DS
DS
DS
DS
GS
GS
GS
DS
G(ext)
= 250 µA; T
= 250 µA; T
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 °C; see
= 1 mA; -55 °C < T
= -1 mA; -55 °C < T
Figure 9
Figure 9
Figure 9
Figure
Figure
Figure 14
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 10 V; I
= 10 V; I
= 0 V; V
10 Ω
F
Rev. 02 — 19 February 2009
7; see
7; see
DS
< 250 µA; T
DS
DS
DS
GS
GS
GS
GS
DS
D
D
GS
GS
L
j
j
= 50 A; T
= 50 A; T
= 44 V; V
= 25 °C
< 175 °C; T
= V
= V
= V
Figure 12
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V; T
Figure 8
Figure 8
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
j
< 175 °C
< 175 °C
j
j
j
j
j
j
GS
j
j
j
j
= 25 °C
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
j
j
GS
= 25 °C
= 175 °C
= 25 °C
= 175 °C
= 25 °C
= 175 °C
j
j
j
= 10 V;
= 25 °C
= -55 °C
> -55 °C
= 10 V;
N-channel TrenchPLUS standard level FET
BUK7107-55ATE
Min
55
50
2
1
-
-
-
20
20
-
-
-
-
-
-
648
-1.4
25
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.1
-
22
22
22
22
-
-
5.8
-
658
-1.54
32
116
19
50
4500
960
510
36
115
159
111
© NXP B.V. 2009. All rights reserved.
Max
-
-
4
-
4.4
10
250
-
-
1000
1000
10
10
7
14
668
-1.68
50
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
V
V
nA
nA
µA
µA
mΩ
mΩ
mV
mV/K
mV
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
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