BUK7610-100B,118 NXP Semiconductors, BUK7610-100B,118 Datasheet
BUK7610-100B,118
Specifications of BUK7610-100B,118
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BUK7610-100B,118 Summary of contents
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... BUK7610-100B N-channel TrenchMOS standard level FET Rev. 03 — 12 April 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...
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... ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B Min Typ Max - - 100 - - 100 - [ 110 [ [ 438 - - 300 -55 - ...
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... Product data sheet 03ng70 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 02ng68 μs p 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7610-100B Product data sheet Conditions see Figure 4 mounted on printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET Min Typ - - - 50 03ng69 δ ...
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... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B Min Typ Max Unit 100 - - 4 0.02 1 µ 500 µ ...
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... R (mΩ) 6 (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET 11 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 100 Forward transconductance as a function of drain current ...
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... Fig 10. Gate-source threshold voltage as a function of 03ng77 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 120 −60 junction temperature 2 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03ng71 ° ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. ...
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... Release date BUK7610-100B_3 20100412 • Modifications: BUK7610-100B_3 has been separated from datasheet BUK75/7610-100B_2 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 April 2010 Document identifier: BUK7610-100B ...