BUK7610-100B,118 NXP Semiconductors, BUK7610-100B,118 Datasheet - Page 7

MOSFET N-CH 100V 75A D2PAK

BUK7610-100B,118

Manufacturer Part Number
BUK7610-100B,118
Description
MOSFET N-CH 100V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7610-100B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
80nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.01 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
110 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057113118::BUK7610-100B /T3::BUK7610-100B /T3
NXP Semiconductors
BUK7610-100B
Product data sheet
Fig 5.
Fig 7.
(A)
I
(A)
I
D
10
10
10
10
10
10
D
350
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
2
8
4
min
10
20
typ
6
4
V
max
GS
V
All information provided in this document is subject to legal disclaimers.
8
GS
6.5
= 4.5 V
V
7
DS
(V)
03ng76
03aa35
5.5
(V)
10
6
Rev. 03 — 12 April 2010
Fig 6.
Fig 8.
R
(mΩ)
g
(S)
DSon
100
fs
80
60
40
20
11
10
0
9
8
7
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK7610-100B
40
15
60
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
(V)
03ng75
03ng73
(A)
20
80
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