IRF6612 International Rectifier, IRF6612 Datasheet - Page 11

• Manufacturer Part Number: IRF6612
• Description: MOSFET N-CH 30V 24A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6612TR

Notes:
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Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
Starting T
Surface mounted on 1 in. square Cu board.
G
= 25Ω, I
J
= 25°C, L = 0.20mH,
AS
= 19A.
™
…
†
‡
ˆ
T
R
part.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
C
θ
measured with thermal couple mounted to top (Drain) of
is measured at
J
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