IRF6612 International Rectifier, IRF6612 Datasheet - Page 7

• Manufacturer Part Number: IRF6612
• Description: MOSFET N-CH 30V 24A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6612TR

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SD
Vgs(th)
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Qgs1 Qgs2
Vds
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HEXFET
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Qgd
Gate Charge Waveform
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Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Qgodr
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
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Period
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V
I
SD
GS
DD
=10V
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