IRF6612 International Rectifier, IRF6612 Datasheet - Page 5

• Manufacturer Part Number: IRF6612
• Description: MOSFET N-CH 30V 24A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6612TR

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140
120
100
0.001
0.01
80
60
40
20
100
0.1
0
10
1
1E-006
25
D = 0.50
50
0.20
0.02
0.05
0.01
T C , Case Temperature (°C)
Maximum Drain Current vs.
0.10
Case Temperature
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
100
0.0001
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
0.01
R
1
R
1
2.5
2.0
1.5
1.0
0.5
0.0
τ
-75
2
τ
R
2
2
R
Threshold Voltage vs. Temperature
2
-50
0.1
R
τ
3
3
R
τ
-25
I D = 250µA
3
3
T J , Temperature ( °C )
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0
R
4
τ
4
R
4
4
1
25
τ
A
τ
A
Ri (°C/W)
50
1.2801
8.7256
21.750
13.251
75
10
100 125 150
0.000322
0.164798
69
2.25760
τi (sec)
5
100