IRF6612 International Rectifier, IRF6612 Datasheet - Page 6

• Manufacturer Part Number: IRF6612
• Description: MOSFET N-CH 30V 24A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6612TR

6
R G
20V
VGS
V DS
10
t p
9
8
7
6
5
4
3
2
1
0
I AS
2
D.U.T
0.01 Ω
L
On-Resistance vs. Gate Voltage
Unclamped Inductive Test Circuit
3
Duty Factor < 0.1%
V GS, Gate -to -Source Voltage (V)
Pulse Width < 1µs
Switching Time Test Circuit
V
GS
and Waveform
4
15V
DRIVER
V
DS
5
+
- V DD
A
6
I
AS
T J = 25°C
D.U.T
T J = 125°C
7
L
D
V
DD
I D = 24A
8
+
-
t p
9
10
V
(BR)DSS
90%
V
10%
150
125
100
V
DS
75
50
25
GS
0
25
Starting T J , Junction Temperature (°C)
t
12V
d(on)
V
Switching Time Waveforms
GS
50
Same Type as D.U.T.
Maximum Avalanche Energy
Current Regulator
.2µF
t
vs. Drain Current
Gate Charge Test Circuit
r
50KΩ
3mA
75
Current Sampling Resistors
.3µF
I
G
t
d(off)
100
TOP
BOTTOM 19A
www.irf.com
D.U.T.
I
D
t
f
125
+
-
V
I D
5.3A
6.2A
DS
150