IRF6612 International Rectifier, IRF6612 Datasheet - Page 4

• Manufacturer Part Number: IRF6612
• Description: MOSFET N-CH 30V 24A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6612TR

1000.00
100.00
100000
4
10.00
10000
1.00
1000
100
0.4
1
Drain-to-Source Voltage
T J = 150°C
0.5
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Typical Capacitance vs.
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Typical Source-Drain Diode
C rss
C oss
C iss
Forward Voltage
0.6
0.7
f = 1 MHZ
10
0.8
T J = 25°C
0.9
V GS = 0V
1.0
100
1.1
1000
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
1
0
0
T A = 25°C
Tj = 150°C
Single Pulse
I D = 19A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Maximum Safe Operating Area
Typical Gate Charge vs.
Q G Total Gate Charge (nC)
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
V DS = 15V
10
20
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10msec
100µsec
1msec
100
30
1000
40