IRFP064VPBF International Rectifier, IRFP064VPBF Datasheet - Page 3

MOSFET N-CH 60V 130A TO-247AC

IRFP064VPBF

Manufacturer Part Number
IRFP064VPBF
Description
MOSFET N-CH 60V 130A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFP064VPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 78A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
6760pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Current, Drain
130 A
Gate Charge, Total
260 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
250 W
Resistance, Drain To Source On
5.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
100 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
88 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.5 m Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
130 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
150 ns
Gate Charge Qg
173.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
200 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP064VPBF
www.irf.com
1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4.0
TOP
BOTTOM
T = 175 C
J
V
5.0
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
°
T = 25 C
, Drain-to-Source Voltage (V)
J
, Gate-to-Source Voltage (V)
6.0
1
°
7.0
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
8.0
10
= 50V
°
9.0
10.0
100
1000
100
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
70A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100

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