IRFP064VPBF International Rectifier, IRFP064VPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP064VPBF
• Description: MOSFET N-CH 60V 130A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP064VPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 78A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6760pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Current, Drain: 130 A
• Gate Charge, Total: 260 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 5.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 100 ns
• Time, Turn-on Delay: 26 ns
• Transconductance, Forward: 88 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 130 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 150 ns
• Gate Charge Qg: 173.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 200 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP064VPBF

12000
10000
4
8000
6000
4000
2000
1000
100
0.1
0
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T = 175 C
Drain-to-Source Voltage
J
V
0.4
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.8
T = 25 C
J
Ciss
Coss
Crss
1.2
10
°
f = 1 MHZ
1.6
V
GS
SHORTED
2.0
= 0 V
2.4
100
10000
1000
100
10
20
16
12
Fig 8. Maximum Safe Operating Area
8
4
0
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Tc = 25°C
Tj = 175°C
Single Pulse
130A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
50
Q , Total Gate Charge (nC)
G
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
150
V
V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 48V
= 30V
10msec
100
www.irf.com
100µsec
200
1msec
250
13
1000
300