IRFP064VPBF International Rectifier, IRFP064VPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP064VPBF
• Description: MOSFET N-CH 60V 130A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP064VPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 78A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6760pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Current, Drain: 130 A
• Gate Charge, Total: 260 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 5.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 100 ns
• Time, Turn-on Delay: 26 ns
• Transconductance, Forward: 88 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 130 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 150 ns
• Gate Charge Qg: 173.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 200 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP064VPBF

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140
120
100
0.01
0.1
80
60
40
20
0.00001
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
175
0.001
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
J
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1