IRFP064VPBF International Rectifier, IRFP064VPBF Datasheet - Page 7

MOSFET N-CH 60V 130A TO-247AC

IRFP064VPBF

Manufacturer Part Number
IRFP064VPBF
Description
MOSFET N-CH 60V 130A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFP064VPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 78A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
6760pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Current, Drain
130 A
Gate Charge, Total
260 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
250 W
Resistance, Drain To Source On
5.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
100 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
88 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.5 m Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
130 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
150 ns
Gate Charge Qg
173.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
200 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP064VPBF
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current

+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
For N-channel
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
Diode Recovery
Current
HEXFET
dv/dt
Forward Drop
di/dt
®
power MOSFETs
D =
-
Period
P.W.
+
[
[
V
V
I
SD
GS
DD
]
=10V
+
-
] ***
7

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