IRF4905STRLPBF International Rectifier, IRF4905STRLPBF Datasheet

IRF4905STRLPBF

Manufacturer Part Number

IRF4905STRLPBF

Description

MOSFET P-CH 55V 42A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRF4905STRLPBF.pdf (11 pages)

2.IRF4905STRLPBF.pdf (4 pages)

Specifications of IRF4905STRLPBF

Package / Case

D²Pak, TO-263 (2 leads + tab)

Mounting Type

Surface Mount

Power - Max

170W

Fet Type

MOSFET P-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

180nC @ 10V

Vgs(th) (max) @ Id

4V @ 250µA

Current - Continuous Drain (id) @ 25° C

42A

Drain To Source Voltage (vdss)

55V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

20 mOhm @ 42A, 10V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.02Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Drain Current (max)

74A

Power Dissipation

3.8W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Current, Drain

-74 A

Gate Charge, Total

180 nC

Polarization

P-Channel

Resistance, Drain To Source On

0.02 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

61 ns

Time, Turn-on Delay

18 ns

Transconductance, Forward

21 S

Voltage, Breakdown, Drain To Source

-55 V

Voltage, Forward, Diode

-1.6 V

Voltage, Gate To Source

±20 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF4905STRLPBF

Manufacturer:

Quantity:

1 310

Company:

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Part Number:

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Manufacturer:

Quantity:

20 000

Company:

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Part Number:

IRF4905STRLPBF

Company:

H&T Electronics

Part Number:

IRF4905STRLPBF

Quantity:

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Company:

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Part Number:

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Quantity:

14 400

Current page: 1 of 11
Download datasheet (169Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF4905L) is available for low-

profile applications.

dv/dt

STG

Pak is suitable for high current applications because of

@ T

Advanced Process Technology

Surface Mount (IRF4905S)

Low-profile through-hole (IRF4905L)

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

on-resistance per silicon area.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

@ -10V

This

300 (1.6mm from case )

Typ.

–––

D P a k

HEXFET

-55 to + 175

IRF4905S/L

Max.

-260

± 20

-5.0

200

930

-74

-52

1.3

-38

3.8

T O -2 6 2

Power MOSFET

DS(on)

Max.

0.75

DSS

= -74A

PD - 9.1478A

= -55V

= 0.02

Units

W/°C

V/ns

°C/W

°C

8/25/97

Related parts for IRF4905STRLPBF

IRF4905STRLPBF Summary of contents

Page 1

... Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...

Page 2

IRF4905S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF4905STRLPBF International Rectifier, IRF4905STRLPBF Datasheet

IRF4905STRLPBF

Specifications of IRF4905STRLPBF

Available stocks

Related parts for IRF4905STRLPBF

IRF4905STRLPBF Summary of contents

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