IRF4905STRLPBF International Rectifier, IRF4905STRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRF4905STRLPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF4905STRLPBF

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 170W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 42A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 74A
• Power Dissipation: 3.8W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Current, Drain: -74 A
• Gate Charge, Total: 180 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.02 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
*
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
G
Period
P.W.
+
[
[
[
V
V
I
SD
IRF4905S/L
GS
DD
]
]
=10V
+
-
V
] ***
DD