IRF4905STRLPBF International Rectifier, IRF4905STRLPBF Datasheet - Page 5

MOSFET P-CH 55V 42A D2PAK

IRF4905STRLPBF

Manufacturer Part Number
IRF4905STRLPBF
Description
MOSFET P-CH 55V 42A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF4905STRLPBF

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
170W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
180nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
42A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 42A, 10V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.02Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
74A
Power Dissipation
3.8W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Current, Drain
-74 A
Gate Charge, Total
180 nC
Polarization
P-Channel
Resistance, Drain To Source On
0.02 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
61 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
21 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0.01
0.1
80
60
40
20
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
C
Case Temperature
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
( C)
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
0.01
R
Pulse Width
Duty Factor
G
-10V
t
1. Duty factor D =
2. Peak T = P
V
d(on)
Notes:
GS
V
DS
t
r
J
µs
IRF4905S/L
DM
x Z
t / t
1
0.1
D.U.T.
thJC
P
2
DM
R
t
+ T
D
d(off)
C
t
1
t
f
t
2
+
-
V
DD
1

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