IRF4905STRLPBF International Rectifier, IRF4905STRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF4905STRLPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF4905STRLPBF

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 170W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 42A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 74A
• Power Dissipation: 3.8W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Current, Drain: -74 A
• Gate Charge, Total: 180 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.02 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF4905S/L
1 0 0 0
7000
6000
5000
4000
3000
2000
1000
1 0 0
1 0
1
0
0 . 4
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
1
T = 17 5°C
J
0 . 6
-V
-V
S D
Drain-to-Source Voltage
D S
Forward Voltage
V
C
C
C
, S ource-to-Drain V oltage (V )
0 . 8
C
C
C
, Drain-to-Source V oltage (V)
G S
is s
rs s
o ss
is s
o ss
rs s
= 0 V,
= C
= C
= C
T = 25 °C
1 . 0
J
gs
ds
gd
+ C
+ C
10
1 . 2
gd
g d
f = 1M H z
, C
1 . 4
ds
SH O RTE D
V
G S
1 . 6
= 0 V
1 . 8
100
A
A
1000
100
10
20
16
12
1
8
4
0
Fig 6. Typical Gate Charge Vs.
Fig 8. Maximum Safe Operating Area
1
0
T
T
Sin gle Pu lse
I
C
J
D
= -3 8A
= 2 5°C
= 1 75°C
OPE R ATIO N IN TH IS A RE A LIMITE D
-V
Gate-to-Source Voltage
D S
40
Q , Total G ate C harge (nC)
G
, Drain-to-Source V oltage (V )
80
BY R
V
V
DS
DS
10
D S(o n)
= - 44V
= - 28V
120
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
160
100µ s
1m s
10m s
100
200
A
A