IRF4905STRLPBF International Rectifier, IRF4905STRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRF4905STRLPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF4905STRLPBF

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 170W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 42A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 74A
• Power Dissipation: 3.8W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Current, Drain: -74 A
• Gate Charge, Total: 180 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.02 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF4905S/L
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
I
V
t
Q
t
I
I
L
S
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
on
SM
rr
DSS
GSS
d(on)
d(off)
f
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
r
S
V
SD
Notes:
fs
rr
(BR)DSS
DS(on)
GS(th)
g
gd
iss
oss
rss
gs
(BR)DSS
For recommended footprint and soldering techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
R
I
T
Starting T
SD
J
G
= 25 , I
/ T
175°C
-38A, di/dt
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Leakage Current
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
J
= 25°C, L = 1.3mH
AS
= -38A. (See Figure 12)
-270A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Min. Typ. Max. Units
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
-55
21
Uses IRF4905 data and test conditions
Pulse width
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.05 –––
3400 –––
1400 –––
–––
–––
–––
230
–––
–––
–––
640
––– 0.02
–––
–––
––– -250
–––
––– -100
–––
–––
89
18
99
61
96
7.5
-260
-1.6
130
350
-4.0
–––
–––
100
180
–––
–––
–––
–––
–––
–––
-74
-25
32
86
300µs; duty cycle
V/°C
nC
ns
µA
nA
ns
nH
nC
V
pF
A
V
V
S
MOSFET symbol
showing the
T
p-n junction diode.
T
di/dt = -100A/µs
integral reverse
V
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= -38A
= -38A
= 0.72
= 2.5
= V
= -44V, V
= 0V, I
= -10V, I
= -25V, I
= -55V, V
= -44V
= -10V, See Fig. 6 and 13
= -25V
= 20V
= -20V
= 0V
= -28V
GS
2%.
, I
F
S
D
D
See Fig. 10
= -38A
Conditions
= -38A, V
= -250µA
D
D
Conditions
GS
= -250µA
GS
= -38A
= -38A
= 0V, T
= 0V
D
GS
= -1mA
G
J
= 0V
= 150°C
S
+L
S
D
D
)