IRF3808SPBF International Rectifier, IRF3808SPBF Datasheet

IRF3808SPBF

Manufacturer Part Number

IRF3808SPBF

Description

MOSFET N-CH 75V 106A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF3808STRRPBF.pdf (11 pages)

2.IRF3808SPBF.pdf (4 pages)

Specifications of IRF3808SPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

7 mOhm @ 82A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

106A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

220nC @ 10V

Input Capacitance (ciss) @ Vds

5310pF @ 25V

Power - Max

200W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

106 A

Gate Charge, Total

150 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

200 W

Resistance, Drain To Source On

5.9 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

68 ns

Time, Turn-on Delay

16 ns

Transconductance, Forward

100 S

Voltage, Breakdown, Drain To Source

75 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF3808SPBF

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Benefits

Absolute Maximum Ratings

Thermal Resistance

HEXFET(R) is a registered trademark of International Rectifier.

Typical Applications

This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes

the latest processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this HEXFET

power MOSFET are a 175°C junction operating temperature, low

R JC, fast switching speed and improved repetitive avalanche

rating. This combination makes the design an extremely efficient

and reliable choice for use in a wide variety of applications.

Description

www.irf.com

dv/dt

STG

@ T

Industrial Motor Drive

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy‡

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient

Parameter

(PCB Mounted, Steady State)**

@ 10V

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

–––

IRF3808SPbF

IRF3808LPbF

HEXFET

-55 to + 175

IRF3808SPbF

Max.

106†

75†

550

200

± 20

430

1.3

5.5

Pak

Power MOSFET

DS(on)

Max.

0.75

DSS

= 106A†

IRF3808LPbF

PD - 95467A

= 0.007

= 75V

TO-262

Units

W/°C

°C/W

V/ns

°C

Related parts for IRF3808SPBF

IRF3808SPBF Summary of contents

Page 1

... Typ. ––– ––– (PCB Mounted, Steady State)** PD - 95467A ® HEXFET Power MOSFET 75V DSS R = 0.007 DS(on 106A† Pak TO-262 IRF3808SPbF IRF3808LPbF Max. Units 106† 75† A 550 200 W 1.3 W/°C ± 430 5.5 V/ns - 175 °C Max ...

Page 2

IRF3808S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000.00 100. ...

Page 4

IRF3808S/LPbF 100000 0V, C iss = rss = oss = 10000 Coss 1000 Crss 100 ...

Page 5

LIMITED BY PACKAGE 100 100 125 T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 ...

Page 6

IRF3808S/LPbF D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 500 TOP Single Pulse BOTTOM 10% Duty Cycle 140A 400 300 200 100 0 25 ...

Page 8

IRF3808S/LPbF D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent 8 + ƒ Period D = Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery ...

Page 9

T HIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most ...

Page 10

IRF3808S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Note: "P" in assembly line position ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

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