IRF3808SPBF International Rectifier, IRF3808SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF3808SPBF
• Description: MOSFET N-CH 75V 106A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3808SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 82A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 106A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 5310pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 106 A
• Gate Charge, Total: 150 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 5.9 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 100 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3808SPBF

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100.00
1000
100
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Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
0.1
TOP
BOTTOM
1.0
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
3.0
V GS , Gate-to-Source Voltage (V)
1
5.0
T J = 25°C
7.0
20µs PULSE WIDTH
T = 25
4.5V
J
V DS = 15V
20µs PULSE WIDTH
10
9.0
°
C
T J = 175°C
11.0
13.0
100
15.0
1000
Fig 2. Typical Output Characteristics
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
0.1
-60
TOP
BOTTOM
I
D
-40
=
V
137A
DS
IRF3808S/LPbF
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
-20
T , Junction Temperature
, Drain-to-Source Voltage (V)
Vs. Temperature
J
0
1
20
40
60
20µs PULSE WIDTH
T = 175
80
J
100 120 140 160 180
10
4.5V
°
( C)
C
V
°
GS
=
10V
3
100