IRF3808SPBF International Rectifier, IRF3808SPBF Datasheet - Page 8

• Manufacturer Part Number: IRF3808SPBF
• Description: MOSFET N-CH 75V 106A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3808SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 82A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 106A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 5310pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 106 A
• Gate Charge, Total: 150 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 5.9 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 100 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3808SPBF

IRF3808S/LPbF
8
Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
For N-channel
DS
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
Diode Recovery
5%
Current
HEXFET
dv/dt
Forward Drop
di/dt
®
power MOSFETs
D =
-
Period
„
P.W.
+
[
[
V
V
I
SD
GS
DD
]
=10V
+
-
] ***
www.irf.com