IRF3808SPBF International Rectifier, IRF3808SPBF Datasheet - Page 6

• Manufacturer Part Number: IRF3808SPBF
• Description: MOSFET N-CH 75V 106A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3808SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 82A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 106A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 5310pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 106 A
• Gate Charge, Total: 150 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 5.9 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 100 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3808SPBF

IRF3808S/LPbF
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V DS
Same Type as D.U.T.
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
.3 F
D.U.T
0.01
L
I
G
Charge
Q
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
800
640
480
320
160
3.5
3.0
2.5
2.0
1.5
1.0
0
Fig 12c. Maximum Avalanche Energy
25
-75 -50 -25
Starting Tj, Junction Temperature
50
Vs. Drain Current
T J , Temperature ( °C )
0
25
75
50
75 100 125 150 175 200
100
I D = 250µA
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TOP
BOTTOM
( C)
°
125
34A
58A
82A
I D
150