IRF3808SPBF International Rectifier, IRF3808SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF3808SPBF
• Description: MOSFET N-CH 75V 106A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3808SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 82A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 106A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 5310pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 106 A
• Gate Charge, Total: 150 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 5.9 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 100 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3808SPBF

IRF3808S/LPbF
100000
1000.00
10000
4
100.00
1000
10.00
100
1.00
0.10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
T J = 175°C
V SD , Source-toDrain Voltage (V)
Forward Voltage
0.5
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T J = 25°C
10
1.0
Crss
Coss
f = 1 MHZ
Ciss
1.5
V GS = 0V
SHORTED
2.0
100
10000
1000
100
Fig 8. Maximum Safe Operating Area
10
12
10
1
8
6
4
2
0
0
Fig 6. Typical Gate Charge Vs.
1
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
Gate-to-Source Voltage
82A
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
V
DS
DS
DS
80
= 60V
= 37V
= 15V
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100
10msec
100µsec
1msec
120
1000
160